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NEPP DDR device reliability FY13 report

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dc.contributor.author Guertin, Steven M.
dc.contributor.author Amrbar, Mehran
dc.date.accessioned 2014-08-19T20:35:10Z
dc.date.available 2014-08-19T20:35:10Z
dc.date.issued 2014-01-01
dc.identifier.uri http://hdl.handle.net/2014/44642
dc.description.abstract This document reports the status of the NEPP Double Data Rate (DDR) Device Reliability effort for FY2013. The task targeted general reliability of > 100 DDR2 devices from Hynix, Samsung, and Micron. Detailed characterization of some devices when stressed by several data storage patterns was studied, targeting ability of the data cells to store the different data patterns without refresh, highlighting the weakest bits. en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2014 en_US
dc.relation.ispartofseries JPL Publication en_US
dc.relation.ispartofseries 13-13 en_US
dc.subject IDD measurements en_US
dc.subject microcircuits en_US
dc.subject parts testing en_US
dc.subject DDR2 en_US
dc.subject Reliability en_US
dc.subject Data Retention en_US
dc.subject Temperature Stress en_US
dc.subject electronic parts en_US
dc.subject Test System Evaluation en_US
dc.subject General Reliability en_US
dc.title NEPP DDR device reliability FY13 report en_US
dc.type Technical Report en_US
dc.subject.NASATaxonomy Electronics and Electrical Engineering en_US


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