Keywords:dose rate effects; linear integrated circuit; space radiation
Publisher:Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2011.
Citation:IEEE Nuclear and Space Radiation Effects Conference (NSREC), Las Vegas, Nevada, July 25, 2011
Abstract:
Dose rate effects are examined in linear bipolar transistors at high and low dose rates. At high dose rates, approximately 50% of the damage anneals at room temperature, even though these devices exhibit enhanced damage at low dose rate. The unexpected recovery of a significant fraction of the damage after tests at high dose rate requires changes in existing test standards. Tests at low temperature with a one-second radiation pulse width show that damage continues to increase for more than 3000 seconds afterward, consistent with predictions of the CTRW model for oxides with a thickness of 700 nm.