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Radiation characterization of commercial GaN devices

Show simple item record Harris, Richard D. Scheick, Leif Z. Hoffman, James P. Thrivikraman, Tushar Jenabi, Masud Gim, Yonggyu Miyahira, Tetsuo 2013-10-11T15:09:34Z 2013-10-11T15:09:34Z 2011-07-26
dc.identifier.citation IEEE Nuclear and Space Radiation Effects Conference (NSREC), Las Vegas, Nevada, July 25, 2011 en_US
dc.identifier.clearanceno 11-2941
dc.description.abstract Radiative feedback from primordial protostars and final mass of the first star Commercially available devices fabricated from GaN are beginning to appear from a number of different suppliers. Based on previous materials and prototype device studies, it is expected that these commercial devices will be quite tolerant to the types of radiation encountered in space. This expectation needs to be verified and the study described herein was undertaken for that purpose. All of the parts discussed in this report are readily available commercially. The parts chosen for study are all targeted for RF applications. Three different studies were performed: 1) a preliminary DDD/TID test of a variety of part types was performed by irradiating with 50 MeV protons, 2) a detailed DDD/TID study of one particular part type was performed by irradiating with 50 MeV protons, and 3) a SEB/SEGR test was performed on a variety of part types by irradiating with heavy ions. No significant degradation was observed in the tests performed in this study. en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2011. en_US
dc.subject wide bandgap semiconductors en_US
dc.subject HEMT en_US
dc.subject DDD/TID study en_US
dc.title Radiation characterization of commercial GaN devices en_US
dc.type Preprint en_US

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