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Numerical simulations of a 20-kW class hall thruster using the magnetic-field-aligned-mesh code Hall2De

Show simple item record Mikellides, Ioannis G. Katz, Ira Kamhawi, Hani Vannoord, Jonathan L. 2013-09-16T20:45:51Z 2013-09-16T20:45:51Z 2011-09-11
dc.identifier.citation 32nd International Electric Propulsion Conference, Weisbaden, Germany, September 11-15, 2011 en_US
dc.identifier.clearanceno 11-3701
dc.description.abstract This paper reports on numerical simulations of the NASA-300M, a 20-kW class Hall thruster developed at the NASA Glenn Research Center (GRC). The numerical simulations have been performed with a 2-D axisymmetric, magnetic field-aligned-mesh (MFAM) plasma solver developed at the Jet Propulsion Laboratory (JPL). The main objective of the collaborative effort is to combine physics-based simulation, plasma diagnostics and recent findings on erosion physics to design and demonstrate a high-power, high-performance Hall thruster that exceeds the life of state-of-the-art Hall thrusters by more than one order of magnitude. The thruster simulations have been carried out at a discharge voltage of 500 V and discharge current of 40 A. The results indicate that although the impact energy of ions may attain values that are comparable to the discharge voltage along the downstream portions of the channel, a withdrawn ionization region and significant ion focusing combine to sustain erosion rates below 1 mm/kh. A more extensive evaluation of the baseline NASA-300M configuration and re-design of this thruster with magnetically shielded walls constitute the main focus of our work in the coming months. en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2011. en_US
dc.subject Hall thrusters en_US
dc.subject plasma simulations en_US
dc.subject erosion en_US
dc.title Numerical simulations of a 20-kW class hall thruster using the magnetic-field-aligned-mesh code Hall2De en_US
dc.type Preprint en_US

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