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Improving single event effects testing through software

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dc.contributor.advisor McClure, Steven en_US
dc.contributor.advisor Allen, Greg en_US Banker, M. W. 2013-09-09T20:26:18Z 2013-09-09T20:26:18Z 2011-08
dc.identifier.citation JPL Summer Space Grant and Summer Internship Program (SIP), Pasadena, California, August 2011 en_US
dc.identifier.clearanceno 11-3712
dc.description.abstract Radiation encountered in space environments can be damaging to microelectronics and potentially cause spacecraft failure. Single event effects (SEE) are a type of radiation effect that occur when an ion strikes a device. Single event gate rupture (SEGR) is a type of SEE that can cause failure in power transistors. Unlike other SEE rates in which a constant linear energy transfer (LET) can be used, SEGR rates sometimes require a non-uniform LET to be used to be accurate. A recent analysis shows that SEGR rates are most easily calculated when the environment is described as a stopping rate per unit volume for each ion species. Stopping rates in silicon for pertinent ions were calculated using the Stopping and Range of Ions in Matter (SRIM) software and CRÈME-MC software. A reference table was generated and can be used by others to calculate SEGR rates for a candidate device. Additionally, lasers can be used to simulate SEEs, providing more control and information at lower cost than heavy ion testing. The electron/hole pair generation rate from a laser pulse in a semiconductor can be related to the LET of an ion. MATLAB was used to generate a plot to easily make this comparison. en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2011. en_US
dc.subject seingle event gate rupture (SEGR) en_US
dc.subject stopping rate en_US
dc.subject laser testing en_US
dc.subject generation equation en_US
dc.title Improving single event effects testing through software en_US
dc.type Student Report en_US

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