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High-throughput processes and structural characterization of single-nanotube based devices for 3D electronics

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dc.contributor.author Kaul, A. B.
dc.contributor.author Megerian, K. G.
dc.contributor.author Baron, R. L.
dc.contributor.author Jennings, A. T.
dc.contributor.author Jang, D.
dc.contributor.author Greer, J. R.
dc.date.accessioned 2013-08-30T19:44:38Z
dc.date.available 2013-08-30T19:44:38Z
dc.date.issued 2009-04-16
dc.identifier.citation SPIE DSS, Micro-and Nanotechnologies for Defense, Space and Securites, Orlando, Florida, April 26-28 , 2011 en_US
dc.identifier.clearanceno 11-4748
dc.identifier.uri http://hdl.handle.net/2014/43604
dc.description.abstract We have developed manufacturable approaches to form single, vertically aligned carbon nanotubes, where the tubes are centered precisely, and placed within a few hundred nm of 1-1.5 m deep trenches. These wafer-scale approaches were enabled by chemically amplified resists and inductively coupled Cryo-etchers to form the 3D nanoscale architectures. The tube growth was performed using dc plasmaenhanced chemical vapor deposition (PECVD), and the materials used for the pre-fabricated 3D architectures were chemically and structurally compatible with the high temperature (700 ºC) PECVD synthesis of our tubes, in an ammonia and acetylene ambient. The TEM analysis of our tubes revealed graphitic basal planes inclined to the central or fiber axis, with cone angles up to 30º for the particular growth conditions used. In addition, bending tests performed using a custom nanoindentor, suggest that the tubes are well adhered to the Si substrate. Tube characteristics were also engineered to some extent, by adjusting growth parameters, such as Ni catalyst thickness, pressure and plasma power during growth. en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2011. en_US
dc.subject nanofabrication en_US
dc.subject top-down fabrication en_US
dc.subject bottom-up synthesis en_US
dc.subject 3D electronics en_US
dc.subject plasmaenhanced chemical vapor deposition (PECVD) en_US
dc.title High-throughput processes and structural characterization of single-nanotube based devices for 3D electronics en_US
dc.type Preprint en_US


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