Persistent Identifier
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hdl:2014/43236 |
Publication Date
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2013-06-02 |
Title
| A 75-116-GHz LNA with 23-K noise temperature at 108 GHz |
Author
| Varonen, Mikko (Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2013.)
Reeves, Rodrigo (Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2013.)
Kangaslahti, Pekka (Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2013.)
Samoska, Lorene (Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2013.)
Cleary, Kieran (Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2013.)
Gawande, Rohit (Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2013.)
Fung, Andy (Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2013.)
Gaier, Todd (Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2013.)
Weinreb, Sander (Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2013.)
Readhead, Anthony C. S. (Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2013.)
Sarkozy, Stephen (Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2013.)
Lai, Richard (Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2013.) |
Point of Contact
|
Use email button above to contact.
Varonen, Mikko |
Description
| In this paper we present the design and measurement results, both on-wafer and in package, of an ultra-low-noise and wideband monolithic microwave integrated circuit (MMIC) amplifier in the frequency range of 75 to 116 GHz. The three-stage amplifier packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology achieves a record noise temperature of 23 K at 108 GHz when cryogenically cooled to 27 K. The measured gain is 22 to 27 dB for frequency range of 75 to 116 GHz. Furthermore, the amplifier utilizes four finger devices with total gate width of 60 um resulting for improved linearity. |
Subject
| Other |
Production Date
| 2013-06-02 |