Single event rates for devices sensitive to particle energy

Edmonds, L. D.; Scheick, L. Z.; Banker, M. W.

dc.contributor.author	Edmonds, L. D.
dc.contributor.author	Scheick, L. Z.
dc.contributor.author	Banker, M. W.	en_US
dc.date.accessioned	2013-05-29T15:21:36Z
dc.date.available	2013-05-29T15:21:36Z
dc.date.issued	2012-07-16
dc.identifier.citation	IEEE Nuclear & Space Radiation Effects Conference (NSREC 2012), Miami, Florida, July 16-20, 2012.	en_US
dc.identifier.clearanceno	12-4602
dc.identifier.uri	http://hdl.handle.net/2014/43181
dc.description.abstract	Single event rates (SER) can include contributions from low-energy particles such that the linear energy transfer (LET) is not constant. Previous work found that the environmental description that is most relevant to the low-energy contribution to the rate is a “stopping rate per unit volume” even when the physical mechanisms for a single-event effect do not require an ion to stop in some device region. Stopping rate tables are presented for four heavy-ion environments that are commonly used to assess device suitability for space applications. A conservative rate estimate utilizing limited test data is derived, and the example of SEGR rate in a power MOSFET is presented.	en_US
dc.description.sponsorship	NASA/JPL	en_US
dc.language.iso	en_US	en_US
dc.publisher	Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2012.	en_US
dc.subject	single-event gate rupture (SEGR)	en_US
dc.subject	design case devices	en_US
dc.subject	conservative rate	en_US
dc.subject	particle energy	en_US
dc.subject	linear energy transfer	en_US
dc.title	Single event rates for devices sensitive to particle energy	en_US
dc.type	Preprint	en_US
dc.subject.NASATaxonomy	Electronics and Electrical Engineering	en_US