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Single-Event Effect Report for EPC Series eGaN FETs: EPC1001, EPC1010, EPC1014, EPC1012

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dc.contributor.author Scheick, Leif
dc.date.accessioned 2013-03-29T20:08:32Z
dc.date.available 2013-03-29T20:08:32Z
dc.date.issued 2013-02
dc.identifier.uri http://hdl.handle.net/2014/42925
dc.description.abstract Heavy ion testing of newly available GaN FETs from EPC were tested in March of 2012 at TAM. The EPC1010, EPC1001, EPC1012, and EPC1014 were tested for general radiation response from gold and xenon ions. Overall the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data. These devices were the first generation production of the device called Gen1. Gen2 parts are scheduled for later in the third quarter of FY2012 en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2013. en_US
dc.relation.ispartofseries JPL Publication en_US
dc.relation.ispartofseries 13-4 en_US
dc.title Single-Event Effect Report for EPC Series eGaN FETs: EPC1001, EPC1010, EPC1014, EPC1012 en_US
dc.type Technical Report en_US
dc.subject.NASATaxonomy Spacecraft Instrumentation and Astrionics en_US


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