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Single-Event Effect Report for EPC Series eGaN FETs: EPC1001, EPC1010, EPC1014, EPC1012

Single-Event Effect Report for EPC Series eGaN FETs: EPC1001, EPC1010, EPC1014, EPC1012

Scheick, Leif
URI: http://hdl.handle.net/2014/42925
Date: 2013-02
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2013.

Abstract:

Heavy ion testing of newly available GaN FETs from EPC were tested in March of 2012 at TAM. The EPC1010, EPC1001, EPC1012, and EPC1014 were tested for general radiation response from gold and xenon ions. Overall the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data. These devices were the first generation production of the device called Gen1. Gen2 parts are scheduled for later in the third quarter of FY2012

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