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Incestigation of high current events in highly scaled NAND flash memories

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dc.contributor.author Irom, Farokh
dc.contributor.author Nguyen, Duc N.
dc.date.accessioned 2012-06-06T16:57:07Z
dc.date.available 2012-06-06T16:57:07Z
dc.date.issued 2011-06-15
dc.identifier.citation NASA Electric Parts and Packaging Program (NEPP) Workshop, Washington, D. C. June 15, 2011. en_US
dc.identifier.clearanceno 11-1739
dc.identifier.uri http://hdl.handle.net/2014/42122
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2011. en_US
dc.title Incestigation of high current events in highly scaled NAND flash memories en_US
dc.type Presentation en_US
dc.subject.NASATaxonomy Electronics and Electrical Engineering en_US


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