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Flash memory reliability: read, program, and erase latency versus endurance cycling

Flash memory reliability: read, program, and erase latency versus endurance cycling

Heidecker, Jason
URI: http://hdl.handle.net/2014/41716
Date: 2010-11
Keywords: flash memory reliability; endurancy cycling; latency; NAND Flash; multi-level-cell (MLC)
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2011.

Abstract:

This report documents the efforts and results of the fiscal year (FY) 2010 NASA Electronic Parts and Packaging Program (NEPP) task for nonvolatile memory (NVM) reliability. This year’s focus was to measure latency (read, program, and erase) of NAND Flash memories and determine how these parameters drift with erase/program/read endurance cycling.

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