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Re-verification of the IRHN57133SE and IRHN57250SE for single event gate rupture and single event burnout

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dc.contributor.author Scheick, Leif
dc.date.accessioned 2011-02-24T23:44:48Z
dc.date.available 2011-02-24T23:44:48Z
dc.date.issued 2010-09
dc.identifier.uri http://hdl.handle.net/2014/41714
dc.description.abstract The vertical metal oxide semiconductor field-effect transistor (MOSFET) is a widely used power transistor onboard a spacecraft. The MOSFET is typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single event gate rupture (SEGR) or single event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. These radiation hardened devices are not immune to SEGR or SEB but, rather, can exhibit them at a much more damaging ion than their non-radiation hardened counterparts. See [1] through [5] for more information. This effort was to investigate the SEGR and SEB responses of two power MOSFETs from IR (the IRHN57133SE and the IRHN57250SE) that have recently been produced on a new fabrication line. These tests will serve as a limited verification of these parts, but it is acknowledged that further testing on the respective parts may be needed for some mission profiles. en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2011. en_US
dc.relation.ispartofseries JPL Publication en_US
dc.relation.ispartofseries 10-09 en_US
dc.subject Single Event Gate Rupture (SEGR) en_US
dc.subject Single Event Burnout (SEB) en_US
dc.subject Metal Oxide Semiconductor Field-Effect Transistor (MOSFET en_US
dc.title Re-verification of the IRHN57133SE and IRHN57250SE for single event gate rupture and single event burnout en_US
dc.type Technical Report en_US


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