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Single-Event Gate Rupture and Single-Event Burnout Test Results Performed on Hi-Rel Fuji Power MOSFETs: 2SK4217, 2SK4152, 2SK4155, and 2SK4158

Single-Event Gate Rupture and Single-Event Burnout Test Results Performed on Hi-Rel Fuji Power MOSFETs: 2SK4217, 2SK4152, 2SK4155, and 2SK4158

Selva, Luis E.
URI: http://hdl.handle.net/2014/41471
Date: 2009-10
Keywords: power metal-oxide-semiconductor (MOSFET); single-event gate rupture (SEGR); single-event burnout (SEB)
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2009.

Abstract:

Several newly available Hi-Rel total dose hardened power MOSFETs manufactured by Fuji Electric Device Technology Co. Ltd (FDT) in conjunction with the Japan Aerospace Exploration Agency (JAXA) were tested for single-event gate rupture (SEGR) and single-event burnout (SEB). The safe-operating area (SOA) of the 2SK4217 (a 100 V rated device), 2SK4152 (130 V), 2SK4155 (200 V), and the 2SK4158 (250 V) were tested with silver (Ag) and xenon (Xe) ions having incident LETs of 42.2 and 53.1 MeV cm2/mg, respectively. Test results show these devices are comparable to currently available total dose hardened technology.

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