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Radiation tests on 2Gb NAND flash memories

Show simple item record Nguyen, D. N. Guertin, S. M. Patterson, J. D. 2009-03-19T18:06:06Z 2009-03-19T18:06:06Z 2006-07
dc.identifier.citation 2006 IEEE Radiation Effects Data Workshop, July 2006, doi:10.1109/REDW.2006.295479 en_US
dc.identifier.clearanceno 06-1953
dc.description.abstract We report on SEE and TID tests of highly scaled Samsung 2Gbits flash memories. Both in-situ and biased interval irradiations were used to characterize the response of the total accumulated dose failures. The radiation-induced failures can be categorized as followings: single event upset (SEU) read errors in biased and unbiased modes, write errors, and single-event-functional-interrupt (SEFI) failures. en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher IEEE en_US
dc.subject NAND circuits en_US
dc.subject flash memories en_US
dc.subject radiation en_US
dc.title Radiation tests on 2Gb NAND flash memories en_US
dc.type Article en_US

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