JPL Technical Report Server

Radiation tests on 2Gb NAND flash memories

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dc.contributor.author Nguyen, D. N.
dc.contributor.author Guertin, S. M.
dc.contributor.author Patterson, J. D.
dc.date.accessioned 2009-03-19T18:06:06Z
dc.date.available 2009-03-19T18:06:06Z
dc.date.issued 2006-07
dc.identifier.citation 2006 IEEE Radiation Effects Data Workshop, July 2006, doi:10.1109/REDW.2006.295479 en_US
dc.identifier.clearanceno 06-1953
dc.identifier.uri http://hdl.handle.net/2014/41139
dc.description.abstract We report on SEE and TID tests of highly scaled Samsung 2Gbits flash memories. Both in-situ and biased interval irradiations were used to characterize the response of the total accumulated dose failures. The radiation-induced failures can be categorized as followings: single event upset (SEU) read errors in biased and unbiased modes, write errors, and single-event-functional-interrupt (SEFI) failures. en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher IEEE en_US
dc.subject NAND circuits en_US
dc.subject flash memories en_US
dc.subject radiation en_US
dc.title Radiation tests on 2Gb NAND flash memories en_US
dc.type Article en_US


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