dc.contributor.author |
Irom, Farokh |
|
dc.contributor.author |
Farmanesh, F. F. |
|
dc.date.accessioned |
2009-03-19T17:05:32Z |
|
dc.date.available |
2009-03-19T17:05:32Z |
|
dc.date.issued |
2004-12 |
|
dc.identifier.citation |
IEEE Transactions on Nuclear Science, Vol. 51, No. 6, p. 3505-3509, December 2004 |
en_US |
dc.identifier.clearanceno |
04-3215 |
|
dc.identifier.uri |
http://hdl.handle.net/2014/41132 |
|
dc.description.abstract |
Single-event upset (SEU) from heavy ions is measured for advanced commercial microprocessors in a dynamic mode with clock frequencies up to 1 GHz. Frequency and core voltage dependence of SEUs in registers and D-Cache are discussed. The results of our studies suggest the SEU in registers and D-Cache tend to increase with frequency. This might have important implications for the overall SEU trend as technology moves toward higher frequencies. |
en_US |
dc.description.sponsorship |
NASA/JPL |
en_US |
dc.language.iso |
en_US |
en_US |
dc.publisher |
IEEE |
en_US |
dc.subject |
cyclotron |
en_US |
dc.subject |
heavy ion |
en_US |
dc.subject |
microprocessors |
en_US |
dc.subject |
silicon-on-insulator |
en_US |
dc.title |
Frequency dependence of single-event upset in advanced commercial PowerPC microprocessors |
en_US |
dc.type |
Article |
en_US |