2 μn InAsSb quantum-dot lasers

Qiu, Yueming; Uhl, David; Keo, Sam

dc.contributor.author	Qiu, Yueming
dc.contributor.author	Uhl, David
dc.contributor.author	Keo, Sam
dc.date.accessioned	2009-03-09T17:13:15Z
dc.date.available	2009-03-09T17:13:15Z
dc.date.issued	2004-05-31
dc.identifier.citation	16th International Conference on Indium Phosphide, Kagoshima, Japan, May 31 - June 4. 2004.	en_US
dc.identifier.clearanceno	03-2979
dc.identifier.uri	http://hdl.handle.net/2014/41125
dc.description.abstract	InAsSb quantum-dot lasers near 2 pm were demonstrated in cw operation at room temperature with a threshold current density of 733 A,/cm², output power of 3 mW/facet and a differential quantum efficiency of 13%.	en_US
dc.description.sponsorship	NASA/JPL	en_US
dc.language.iso	en_US	en_US
dc.publisher	Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2005.	en_US
dc.subject	quantum dot	en_US
dc.subject	semi conductor lasers	en_US
dc.title	2 μn InAsSb quantum-dot lasers	en_US
dc.type	Preprint	en_US