Understanding how molecular hydrogen impacts the total dose and dose rate response of linear bipolar circuits

Abstract

Recent Enhanced Low Dose Rate Sensitivity (ELDRS) investigations carried out by RLP Research, Arizona State University (ASU) and Jet Propulsion Laboratory (JPL) have shown significant differences in the degradation of bipolar micro-circuits with total dose in the presence of molecular hydrogen (H2) in packages. This has a significant impact on radiation hardness assurance and opens up opportunities to improve device performance. The general objectives of this program are to: 1. Determine the extent to which hydrogen contamination affects the total dose and dose rate response of linear bipolar circuits; 2. Develop a model that will enable the prediction of high dose rate (HDR) and low dose rate (LDR) response asymptotes and transition dose rates as a function of total dose, temperature, pressurized hydrogen, defect precursors, and other process dependent variables; 3. Explore the possibility of an accelerated hardness assurance method and possible hardening approaches; and 4. Extend the work to other technologies that have total dose response affected by hydrogen contamination.In this document, we xperimentally demonstrate with test transistors and circuits that hydrogen is correlated with ELDRS in bipolar linear circuits. We show that the amount of hydrogen determines: 1) the total dose response versus dose rate and 2) the transition dose rates between the high and low dose rate responses. The experimental results are supported with a steady state drift/diffusion analytical model as well as modeling calculations using COMSOL Multiphysics.