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640 x 512 pixels long-wavelength infrared (LWIR) quantum-dot infrared photodetector (QDIP) imaging focal plane array

640 x 512 pixels long-wavelength infrared (LWIR) quantum-dot infrared photodetector (QDIP) imaging focal plane array

Gunapala, Sarath D.; Bandara, Sumith V.; Hill, Cory J.; Ting, David Z.; Liu, John K.; Rafol, Sir B.; Blazejewski, Edward R.; Mumolo, Jason M.; Keo, Sam A.; Krishna, Sanjay; Chang, Y.-C.; Shott, Craig A.
URI: http://hdl.handle.net/2014/41016
Date: 2007-03-03
Keywords: focal plane array; quantum dots (QDs); infrared detector
Publisher: IEEE-Inst Electrical Electronics Engineers Inc
Citation: Ieee Journal Of Quantum Electronics, Vol. 43, No. 3, March 2007, doi:10.1109/JQE.2006.889645

Abstract:

Epitaxially grown self-assembled. InAs-InGaAs-GaAs quantum dots (QDs) are exploited for the development of large-format long-wavelength infrared focal plane arrays (FPAs). The dot-in-a-well (DWELL) structures were experimentally shown to absorb both 45 degrees and normal incident light, therefore, a reflection grating structure was used to enhance the quantum efficiency. The devices exhibit peak responsivity out to 8.1 mu m, with peak detectivity reaching similar to 1 X 10(10) Jones at 77 K. The devices were fabricated into the first long-wavelength 640 x 512 pixel QD infrared photodetector imaging FPA, which has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60-K operating temperature.

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