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Ultra-low-temperature homoepitaxial growth of Sb-doped silicon

Show simple item record Blacksberg, Jordana Hoenk, Michael E. Nikzad, Shouleh 2008-05-29T22:42:43Z 2008-05-29T22:42:43Z 2005-11-04
dc.identifier.citation Journal of Crystal Growth 285 (2005) 473–480, doi:10.1016/j.jcrysgro.2005.09.005 en_US
dc.description.abstract An ultra-low-temperature process for homoepitaxial growth of high-quality, surface-confined, Sb-doped silicon layers is presented. Non-equilibrium growth by molecular beam epitaxy (MBE) is used to achieve dopant incorporation in excess of 2×10<sup>14</sup>cm<sup>-2</sup> in a thin, surface-confined layer. Sb surface segregation larger than expected from theoretical models was observed, in agreement with other experimental works. Furthermore, this work details an entirely low-temperature process (less than 450 degree C) that can be applied to fully processed and aluminum-metallized silicon devices. One application of this process is the formation of a back-surface electrode for back-illuminated high-purity silicon imaging arrays. en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher Elsevier B.V. en_US
dc.subject Delta doping en_US
dc.subject Surface segregation en_US
dc.subject Molecular beam epitaxy en_US
dc.subject Semiconducting silicon en_US
dc.title Ultra-low-temperature homoepitaxial growth of Sb-doped silicon en_US
dc.type Article en_US

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