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Radiation effects assessment of MRAM devices

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dc.contributor.author Elghefari, Mohamed
dc.contributor.author McClure, Steve
dc.date.accessioned 2008-05-19T17:23:34Z
dc.date.available 2008-05-19T17:23:34Z
dc.date.issued 2008-05
dc.identifier.uri http://hdl.handle.net/2014/40809
dc.description.abstract The Magneto-resistive Random Access Memory (MRAM) from Freescale Semiconductor, MR2A16A, was subjected to heavy ion single event testing. Test results show that this device is sensitive to Single Event Latchup (SEL). The sensitivity of the MRAM was attributed to the complementary metal oxide semiconductor (CMOS) process in which the active portion of this device is constructed. Therefore, the device must be used with caution and may require mitigation techniques if used in a space environment. There was no indication that the MRAM technology itself, the memory element construction, is subject to damage from heavy ions. en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2008. en_US
dc.relation.ispartofseries JPL Publication en_US
dc.relation.ispartofseries 08-19 en_US
dc.subject Magneto-resistive Random Access Memory (MRAM) en_US
dc.subject Single Event Effects (SEE) en_US
dc.title Radiation effects assessment of MRAM devices en_US
dc.type Technical Report en_US


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