JPL Technical Report Server

Testing guideline for single event gate rupture (SEGR) of power MOSFETs

Show simple item record

dc.contributor.author Scheick, Leif
dc.date.accessioned 2008-04-29T20:10:10Z
dc.date.available 2008-04-29T20:10:10Z
dc.date.issued 2008-02
dc.identifier.uri http://hdl.handle.net/2014/40764
dc.description.abstract The purpose of this document is two-fold. First, the document lists and discusses many of the issues important to understand when testing power MOSFETs. Second, the recommended approach for using radiation test data to define the device application requirements is presented. These include SEE rate calculation, data analysis, and derating guidelines. A significant amount of work has been done on the basic effects of SEB and SEGR. References are supplied where seminal work has been done on the topic at hand. The reader is urged to review the references if the testing issues or mission application at hand are complex. en_US
dc.description.sponsorship NASA/JPL en_US
dc.language.iso en_US en_US
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2008. en_US
dc.relation.ispartofseries JPL Publication en_US
dc.relation.ispartofseries 08-10 en_US
dc.subject radiation testing en_US
dc.title Testing guideline for single event gate rupture (SEGR) of power MOSFETs en_US
dc.type Technical Report en_US


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search


Browse

My Account