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TID, SEE and radiation induced failures in advanced flash memories

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dc.contributor.author Nguyen, Duc N.
dc.contributor.author Scheick, Leif Z.
dc.date.accessioned 2007-03-12T21:25:31Z
dc.date.available 2007-03-12T21:25:31Z
dc.date.issued 2003-11-12
dc.identifier.citation Non-volatile Memory Technology Symposium, San Diego, California, November 12-13, 2003. en
dc.identifier.clearanceno 03-2930
dc.identifier.uri http://hdl.handle.net/2014/40155
dc.description.abstract We report on TID and SEE tests of multi-level and higher density flash memories. Stand-by currents and functionality tests were used to characterize the response of radiation-induced failures. The radiation-induced failures can be categorized as followings: SEU read errors during irradiation, stuck-bit read errors verified post-irradiation, write errors, erase failures, multiple upsets, and single-event latch up. en
dc.description.sponsorship NASA/JPL en
dc.format.extent 616453 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US en
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2003. en
dc.subject Total Ioniation Dose (TID) en
dc.subject singel event effects (SEE) en
dc.subject flash memories en
dc.title TID, SEE and radiation induced failures in advanced flash memories en
dc.type Preprint en


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