TID, SEE and radiation induced failures in advanced flash memories

Nguyen, Duc N.; Scheick, Leif Z.

TID, SEE and radiation induced failures in advanced flash memories

Nguyen, Duc N.; Scheick, Leif Z.

URI: http://hdl.handle.net/2014/40155

Date: 2003-11-12

Keywords: Total Ioniation Dose (TID); singel event effects (SEE); flash memories

Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2003.

Citation: Non-volatile Memory Technology Symposium, San Diego, California, November 12-13, 2003.

Abstract:

We report on TID and SEE tests of multi-level and higher density flash memories. Stand-by currents and functionality tests were used to characterize the response of radiation-induced failures. The radiation-induced failures can be categorized as followings: SEU read errors during irradiation, stuck-bit read errors verified post-irradiation, write errors, erase failures, multiple upsets, and single-event latch up.

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