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The effect of integration of strontium-bismuth-tantalate capacitors onto SOI wafers.

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dc.contributor.author Strauss, Karl F.
dc.contributor.author Joshi, Vikram
dc.contributor.author Ohno, Morifumo
dc.contributor.author Ida, Jiro
dc.contributor.author Nagatomo, Yoshiki
dc.date.accessioned 2007-02-12T23:41:39Z
dc.date.available 2007-02-12T23:41:39Z
dc.date.issued 2006-03-04
dc.identifier.citation IEEE Aerospace Conference, Big Sky, Montana, March 4-11, 2006. en
dc.identifier.clearanceno 05-3341
dc.identifier.uri http://hdl.handle.net/2014/40094
dc.description.abstract We report for the first time the successful integration of Strontium-Bismuth-Tantalate ferroelectric capacitors on an SOI Substrate. We have verified that the unique processing requirements of SBT capacitors does not affect the properties of the surrounding FD-SOI transistors, and, conversely, we have verified that the SOI processing does not affect the quality of the SBT capacitors. en
dc.description.sponsorship NASA/JPL en
dc.format.extent 689030 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US en
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2006. en
dc.subject SOI en
dc.subject Ferro-electric en
dc.subject memory en
dc.subject non-volatile en
dc.title The effect of integration of strontium-bismuth-tantalate capacitors onto SOI wafers. en
dc.type Preprint en


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