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Comparison of above bandgap laser and MeV ion induced single event transiets in high-speed Si photonic devices.

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dc.contributor.author Laird, Jamie S.
dc.contributor.author Hirao, Toshio
dc.contributor.author Onoda, Shinobu
dc.contributor.author Itoh, Hisayoshi
dc.contributor.author Edmonds, Larry
dc.contributor.author Johnston, Allan
dc.date.accessioned 2006-08-24T21:04:40Z
dc.date.available 2006-08-24T21:04:40Z
dc.date.issued 2006-07-17
dc.identifier.citation IEEE Transaction on Nuclear Science and Space Radiation Effects Conference, (NSREC), Jacksonville, Florida, July 17-21, 2006. en
dc.identifier.clearanceno IEEE Transaction on Nuclear Science and Space Radiation Effects Conference, (NSREC), Jacksonville, Florida, July 17-21, 2006.
dc.identifier.clearanceno 06-2002
dc.identifier.uri http://hdl.handle.net/2014/39730
dc.description.abstract We illustrate inherent differences between Single Event Transients generated by an above bandgap picosecond lasers and MeV heavy ions by comparing transient currents collected with an ion microbeam and picosecond laser with varying track waist. en
dc.description.sponsorship NASA/JPL en
dc.format.extent 930533 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US en
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2006. en
dc.subject pulsed lasers en
dc.subject MeV inomicrobeam en
dc.subject TCAD en
dc.subject si pin en
dc.title Comparison of above bandgap laser and MeV ion induced single event transiets in high-speed Si photonic devices. en
dc.type Preprint en


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