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A radiation - tolerant, low - power non - volatile memory based on silicon nanocrystal quantum dots.

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dc.contributor.author Bell, L. D.
dc.contributor.author Boer, E.
dc.contributor.author Ostraat, M.
dc.contributor.author Brongersma, M. L.
dc.contributor.author Flagad, R. C.
dc.contributor.author Atwater, H. A.
dc.contributor.author deBlauwe, J.
dc.contributor.author Green, M. L.
dc.date.accessioned 2006-07-27T18:36:39Z
dc.date.available 2006-07-27T18:36:39Z
dc.date.issued 2001-02-21
dc.identifier.citation Forum on Innovative Approaches to Outer Planet Exploration 2001-2020, Houston, Texas, February 21, 2001. en
dc.identifier.clearanceno Forum on Innovative Approaches to Outer Planet Exploration 2001-2020, Houston, Texas, February 21, 2001.
dc.identifier.clearanceno 01-0229
dc.identifier.uri http://hdl.handle.net/2014/39583
dc.description.abstract Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in Si02 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled. en
dc.description.sponsorship NASA/JPL en
dc.format.extent 730236 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US en
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2001. en
dc.subject non-volatile memory en
dc.subject single electronics en
dc.subject nanocrystals en
dc.title A radiation - tolerant, low - power non - volatile memory based on silicon nanocrystal quantum dots. en
dc.type Preprint en


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