dc.contributor.author |
Bell, L. D. |
|
dc.contributor.author |
Boer, E. |
|
dc.contributor.author |
Ostraat, M. |
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dc.contributor.author |
Brongersma, M. L. |
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dc.contributor.author |
Flagad, R. C. |
|
dc.contributor.author |
Atwater, H. A. |
|
dc.contributor.author |
deBlauwe, J. |
|
dc.contributor.author |
Green, M. L. |
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dc.date.accessioned |
2006-07-27T18:36:39Z |
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dc.date.available |
2006-07-27T18:36:39Z |
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dc.date.issued |
2001-02-21 |
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dc.identifier.citation |
Forum on Innovative Approaches to Outer Planet Exploration 2001-2020, Houston, Texas, February 21, 2001. |
en |
dc.identifier.clearanceno |
Forum on Innovative Approaches to Outer Planet Exploration 2001-2020, Houston, Texas, February 21, 2001. |
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dc.identifier.clearanceno |
01-0229 |
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dc.identifier.uri |
http://hdl.handle.net/2014/39583 |
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dc.description.abstract |
Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in Si02 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled. |
en |
dc.description.sponsorship |
NASA/JPL |
en |
dc.format.extent |
730236 bytes |
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dc.format.mimetype |
application/pdf |
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dc.language.iso |
en_US |
en |
dc.publisher |
Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2001. |
en |
dc.subject |
non-volatile memory |
en |
dc.subject |
single electronics |
en |
dc.subject |
nanocrystals |
en |
dc.title |
A radiation - tolerant, low - power non - volatile memory based on silicon nanocrystal quantum dots. |
en |
dc.type |
Preprint |
en |