JPL Technical Report Server

Mid-IR interband cascade lasers

Show simple item record

dc.contributor.author Yang, Rui Q.
dc.contributor.author Hill, Cory J.
dc.contributor.author Qiu, Yueming
dc.date.accessioned 2006-06-30T21:06:28Z
dc.date.available 2006-06-30T21:06:28Z
dc.date.issued 2005-11-28
dc.identifier.citation Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, en
dc.identifier.clearanceno Material Research Society (MRS) Fall Meeting, Boston, Massachutes,
dc.identifier.clearanceno 05-3606
dc.identifier.uri http://hdl.handle.net/2014/39441
dc.description.abstract Efficient mid-IR interband cascade (IC) lasers are developed based on 111-V semiconductor materials to cover wavelength range from 2.7 to 5.6 μm. These IC lasers reuse injected electrons in cascade stages for photon generation with high quantum efficiency to achieve high output powers. Also, IC lasers have low threshold current density with very efficient use of applied voltage, resulting in reduced power consumptions. Single-mode distributed feedback lasers have been made, and integrated into aircraft and balloon instrument which made measurements of CH4 and HCI. In this work, the characteristics of IC lasers and their recent development are reviewed. en
dc.description.sponsorship NASA/JPL en
dc.format.extent 2618732 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US en
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2005. en
dc.subject diode lasers en
dc.subject mid - infrared en
dc.subject semiconductor suprelattices en
dc.title Mid-IR interband cascade lasers en
dc.type Preprint en


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search


Browse

My Account