Keywords:InP; Monolithic millimeter-wave integrated circuit (MMIC); high electron mobility transistor (HEMT); power amplifier; voltage controlled oscillators (VCO); active doubler
Publisher:Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2001.
Citation:12th International Symposium on Space Terahertz Technology, San Diego, California, February 14-16, 2001.
Abstract:
We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.l-μm gatelength InAI/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an fmax above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz.
