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Carbon nanotube Schottky diodes using Ti-Schottky and Pt-ohmic contacts for high frequency applications

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dc.contributor.author Manohara, Harish M.
dc.contributor.author Wong, Eric W.
dc.contributor.author Schlecht, Erich
dc.contributor.author Hunt, Brian D.
dc.contributor.author Siegel, Peter H.
dc.date.accessioned 2006-05-12T22:01:33Z
dc.date.available 2006-05-12T22:01:33Z
dc.date.issued 2005-05
dc.identifier.citation Nano Letters Vol. 5, No. 7, 1469-1474. en
dc.identifier.clearanceno 05-0952
dc.identifier.uri http://hdl.handle.net/2014/39256
dc.description.abstract We have demonstrated Schottky diodes using semiconducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse bias breakdown voltages of greater than 15 V. To decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) potentially comparable to that of the state-of-the-art gallium arsenide solid-state Schottky diodes, in the range of 10-13 W√xHz. en
dc.description.sponsorship NASA/JPL en
dc.format.extent 236269 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US en
dc.publisher American Chemical Society en
dc.subject switching speeds en
dc.subject semiconducting en
dc.subject carbon nanotubes en
dc.title Carbon nanotube Schottky diodes using Ti-Schottky and Pt-ohmic contacts for high frequency applications en
dc.type Article en


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