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Progress in MBE grown type-II superlattice photodiodes

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dc.contributor.author Hill, Cory J.
dc.contributor.author Li, Jian V.
dc.contributor.author Mumolo, Jason M.
dc.contributor.author Gunapala, Sarath D.
dc.date.accessioned 2006-05-01T20:22:46Z
dc.date.available 2006-05-01T20:22:46Z
dc.date.issued 2006-04-17
dc.identifier.citation SPIE 2006 Defense and Security Symposium, Orlando, Florida, April 17-21, 2006 en
dc.identifier.clearanceno 06-0933
dc.identifier.uri http://hdl.handle.net/2014/39193
dc.description.abstract We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption in the 8-12μm range. Recent devices have produced detectivities as high as 8x10 to the tenth power Jones with a differential resistance-area product greater than 6 Ohmcm² at 80K with a long wavelength cutoff of approximately 12μm. The measured quantum efficiency of these front-side illuminated devices is close to 30% in the 10-11μm range without antireflection coatings. en
dc.description.sponsorship NASA/JPL en
dc.format.extent 593887 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US en
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2006. en
dc.subject molecular beam epitaxy (MBE) en
dc.subject suprlattices en
dc.subject infrared detectors en
dc.subject chemical passivation en
dc.title Progress in MBE grown type-II superlattice photodiodes en
dc.type Preprint en


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