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T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications.

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dc.contributor.author Fung, Andy
dc.contributor.author Samoska, Lorene
dc.contributor.author Velebir, Jim
dc.contributor.author Siege, Peter
dc.contributor.author Rodwell, Mark
dc.contributor.author Paidi, Vamsi
dc.contributor.author Griffth, Zach
dc.contributor.author Urteaga, Miguel
dc.contributor.author Malik, Roger
dc.date.accessioned 2006-03-31T23:06:38Z
dc.date.available 2006-03-31T23:06:38Z
dc.date.issued 2004-04-27
dc.identifier.citation 15 th International Symposium on Space Terahertz Technology, Northampton, Massachusetts, April 27-29, 2004. en
dc.identifier.clearanceno 04-1467
dc.identifier.uri http://hdl.handle.net/2014/38985
dc.description.abstract We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield. en
dc.description.sponsorship NASA/JPL en
dc.format.extent 506940 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US en
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2004. en
dc.subject transistor en
dc.subject submillimeter en
dc.subject THz en
dc.subject heterojunction bipolar transistors (HBT) en
dc.title T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications. en
dc.type Preprint en


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