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Indium phosphide double heterojunction bipolar transistors with T-shaped emitter metal features having cutoff frequencies in excess of 200 GHz

Indium phosphide double heterojunction bipolar transistors with T-shaped emitter metal features having cutoff frequencies in excess of 200 GHz

Fung, A. K.; Samoska, L.; Velebir, J.; Siegel, P.; Rodwell, M.; Paidi, V.; Griffith, Z.; Malik, R.
URI: http://hdl.handle.net/2014/38342
Date: 2005-10
Keywords: transistors; submillimeter; THz; HBT
Publisher: Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2005.
Citation: State-of-the-Art Programs on Compound Semiconductors XLIII, Los Angeles, CA, Oct. 16-21, 2005

Abstract:

We demonstrate Indium Phosphide Double Heterojunction Bipolar Transistors with simultaneous cutoff frequency Fmax of 288 GHz and current gain cutoff frequency Ft of 251 GHz.

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