Publisher:Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2005.
Citation:State-of-the-Art Programs on Compound Semiconductors XLIII, Los Angeles, CA, Oct. 16-21, 2005
Abstract:
We demonstrate Indium Phosphide Double Heterojunction Bipolar Transistors with simultaneous cutoff frequency Fmax of 288 GHz and current gain cutoff frequency Ft of 251 GHz.