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Noise performance of 0.35-(mu)m SOI CMOS devices and micropower preamplifier following 63-MeV, 1-Mrad (Si) proton irradiation

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dc.contributor.author Binkley, D. M.
dc.contributor.author Hopper, C. E.
dc.contributor.author Cressler, J. D.
dc.contributor.author Mojarradi, M. M.
dc.contributor.author Blalock, B. J.
dc.date.accessioned 2005-11-15T21:29:30Z
dc.date.available 2005-11-15T21:29:30Z
dc.date.issued 2004-07
dc.identifier.citation The Nuclear and Space Radiation Effects Conference, Atlanta, GA, July 19-23, 2004 en
dc.identifier.clearanceno 04-0398
dc.identifier.uri http://hdl.handle.net/2014/38147
dc.description.abstract This paper presents measured noise for 0.35(mu)m, silicon-on-insulator devices and a micropower preamplifier following 63-MeV, 1-Mrad (Si) proton irradiation. Flicker noise voltage, important for gyros having low frequency output, increases less than 32% after irradiation. en
dc.description.sponsorship NASA en
dc.format.extent 360998 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US en
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2004. en
dc.subject low power electronics en
dc.title Noise performance of 0.35-(mu)m SOI CMOS devices and micropower preamplifier following 63-MeV, 1-Mrad (Si) proton irradiation en
dc.type Preprint en


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