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GaN-based micro pressure sensor for extreme environments

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dc.contributor.author Son, K.-A.
dc.contributor.author Liu, Y.
dc.contributor.author Ruden, P. P.
dc.contributor.author Xie, J.
dc.contributor.author Biyikli, N.
dc.contributor.author Moon, Y.-T.
dc.contributor.author Onojima, N.
dc.contributor.author Morkoc, H.
dc.date.accessioned 2005-11-11T23:00:13Z
dc.date.available 2005-11-11T23:00:13Z
dc.date.issued 2005-10
dc.identifier.citation IEEE Sensors 2005, Irvine, CA, October 31 - November 4, 2005 en
dc.identifier.clearanceno 05-3013
dc.identifier.uri http://hdl.handle.net/2014/38060
dc.description.abstract The linearity and reversibility in pressure response suggest that these newly investigated n-GaN/AlxGa(1-x)N/n-GaN devices are promising candidates for high-pressure sensor applications. en
dc.description.sponsorship NASA en
dc.format.extent 292849 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US en
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2005. en
dc.subject GaN en
dc.subject microsensor en
dc.subject pressure en
dc.subject extreme environment en
dc.title GaN-based micro pressure sensor for extreme environments en
dc.type Preprint en


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