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Development of GaN-based microchemical sensor nodes

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dc.contributor.author Prokopuk, Nicholas
dc.contributor.author Son, Kyung-Ah
dc.contributor.author George, Thomas
dc.contributor.author Moon, Jeong S.
dc.date.accessioned 2005-11-11T21:33:30Z
dc.date.available 2005-11-11T21:33:30Z
dc.date.issued 2005-09
dc.identifier.citation IEEE Sensors 2005, Irvine, CA, September 30, 2005 en
dc.identifier.clearanceno 05-3047
dc.identifier.uri http://hdl.handle.net/2014/38054
dc.description.abstract Sensors based III-N technology are gaining significant interest due to their potential for monolithic integration of RF transceivers and light sources and the capability of high temperature operations. We are developing a GaN-based micro chemical sensor node for remote detection of chemical toxins, and present electrical responses of AlGaN/GaN HEMT (High Electron Mobility Transistor) sensors to chemical toxins as well as other common gases. en
dc.description.sponsorship NASA en
dc.format.extent 590416 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US en
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2004. en
dc.subject GaN en
dc.subject microsensor en
dc.subject chemical en
dc.subject extreme environment en
dc.title Development of GaN-based microchemical sensor nodes en
dc.type Preprint en


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