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Passivation of MBE grown InGaSb/InAs superlattice photodiodes

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dc.contributor.author Hill, Cory J.
dc.contributor.author Keo, Sam S.
dc.contributor.author Mumolo, Jason M.
dc.contributor.author Gunapala, Sarath D.
dc.date.accessioned 2005-10-28T22:10:02Z
dc.date.available 2005-10-28T22:10:02Z
dc.date.issued 2005-03
dc.identifier.citation SPIE Defense and Security Symposium, March 28 - April 1, 2005 en
dc.identifier.clearanceno 05-0561
dc.identifier.uri http://hdl.handle.net/2014/37821
dc.description.abstract We have performed wet chemical passivation tests on InGaSb/InAs superlattice photodiode structures grown molecular beam epitaxy. The details of the devices growth and characterization as well as the results of chemical passivation involving RuCl3 and H2SO4 with SiO2 dielectric depositions are presented. en
dc.description.sponsorship NASA en
dc.format.extent 5384449 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US en
dc.publisher Pasadena, CA : Jet Propulsion Laboratory, National Aeronautics and Space Administration, 2005. en
dc.subject diode lasers en
dc.subject mid-infrared en
dc.subject semiconductor superlattices en
dc.subject molecular beam en
dc.title Passivation of MBE grown InGaSb/InAs superlattice photodiodes en
dc.type Preprint en


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