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Lasing characteristics of InAs quantum dot laers on InP substrate

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dc.contributor.author Yang, Y. en_US
dc.contributor.author Qiu, D.
dc.contributor.author Uhl, R.
dc.contributor.author Chacon, R.
dc.date.accessioned 2004-11-10T15:44:13Z
dc.date.available 2004-11-10T15:44:13Z
dc.date.issued 2003
dc.identifier.citation Applied Physics Letters en_US
dc.identifier.clearanceno 03-0877
dc.identifier.uri http://hdl.handle.net/2014/37252
dc.description.abstract Single-stack InAs self-assembled quantum dots (QD) lasers based on InP substrate have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with wavelengths between 1.59 to 1.74 mu m. en_US
dc.format.extent 2739006 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other quantum dot semiconductor laser en_US
dc.title Lasing characteristics of InAs quantum dot laers on InP substrate en_US


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