Lasing characteristics of InAs quantum dot laers on InP substrate

Yang, Y.; Qiu, D.; Uhl, R.; Chacon, R.

dc.contributor.author	Yang, Y.	en_US
dc.contributor.author	Qiu, D.
dc.contributor.author	Uhl, R.
dc.contributor.author	Chacon, R.
dc.date.accessioned	2004-11-10T15:44:13Z
dc.date.available	2004-11-10T15:44:13Z
dc.date.issued	2003
dc.identifier.citation	Applied Physics Letters	en_US
dc.identifier.clearanceno	03-0877
dc.identifier.uri	http://hdl.handle.net/2014/37252
dc.description.abstract	Single-stack InAs self-assembled quantum dots (QD) lasers based on InP substrate have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with wavelengths between 1.59 to 1.74 mu m.	en_US
dc.format.extent	2739006 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.subject.other	quantum dot semiconductor laser	en_US
dc.title	Lasing characteristics of InAs quantum dot laers on InP substrate	en_US