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SEU evaluation of FeRAM memories for space applications

Show simple item record Scheick, L. en_US Guertin, S. en_US Nguyen, d. en_US 2004-11-09T23:08:25Z 2004-11-09T23:08:25Z 2002-11-04 en_US
dc.identifier.citation Non-Volatime Memory Technology Symposium 2002 en_US
dc.identifier.citation Honolulu, HI, USA en_US
dc.identifier.clearanceno 02-2762 en_US
dc.description.abstract SEU cross-sections were obtained for two different FeRAM memories: The 64 kbit and 256 kbit Ramtron FeRAM and the Hynix 64 kbit device. The devices were seen to have latch-up characteristics typical of commercial CMOS. Also, errors in the memory were also seen from heavy ion irradiation. en_US
dc.format.extent 2923163 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other SEU FeRAM ion irradiation en_US
dc.title SEU evaluation of FeRAM memories for space applications en_US

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