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SEU evaluation of FeRAM memories for space applications

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dc.contributor.author Scheick, L. en_US
dc.contributor.author Guertin, S. en_US
dc.contributor.author Nguyen, d. en_US
dc.date.accessioned 2004-11-09T23:08:25Z
dc.date.available 2004-11-09T23:08:25Z
dc.date.issued 2002-11-04 en_US
dc.identifier.citation Non-Volatime Memory Technology Symposium 2002 en_US
dc.identifier.citation Honolulu, HI, USA en_US
dc.identifier.clearanceno 02-2762 en_US
dc.identifier.uri http://hdl.handle.net/2014/37206
dc.description.abstract SEU cross-sections were obtained for two different FeRAM memories: The 64 kbit and 256 kbit Ramtron FeRAM and the Hynix 64 kbit device. The devices were seen to have latch-up characteristics typical of commercial CMOS. Also, errors in the memory were also seen from heavy ion irradiation. en_US
dc.format.extent 2923163 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other SEU FeRAM ion irradiation en_US
dc.title SEU evaluation of FeRAM memories for space applications en_US


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