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Self-assembled III-V quantum dots: potential for silicon optoelectronics

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dc.contributor.author Leon, R. en_US
dc.date.accessioned 2004-11-09T21:35:08Z
dc.date.available 2004-11-09T21:35:08Z
dc.date.issued 2001-09 en_US
dc.identifier.citation Silicon Monolithic Integrated Circuits in RF Systems Symposium 2001 en_US
dc.identifier.citation Ann Arbor, MI, USA, September 12 - 14, 2001 en_US
dc.identifier.clearanceno 01-1583
dc.identifier.uri http://hdl.handle.net/2014/36832
dc.description.abstract The basic optoelectronic properties of self-forming InGaAs/InAlAs QDs are examined in parallel with their device implementation. Recent results showing remarkably good tolerance to radiation induced point defects and good luminescence emission from InAs/InGaAs QDs grown on dislocationarrays are discussed in terms of an enabling technology which will allow optelectronics integration with silicon technology. en_US
dc.format.extent 1090592 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other nanotechnologies quantum dot devices heteroepitaxy InAs GaAs silicon photoluminescence III-V compounds Stranski-Krastanow en_US
dc.title Self-assembled III-V quantum dots: potential for silicon optoelectronics en_US


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