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Optical Properties of Semiconductor-Metal Composite Thin Films in the Infrared Region

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dc.contributor.author Nagendra, C.L. en_US
dc.contributor.author Lamb, James L. en_US
dc.date.accessioned 2004-10-06T17:06:18Z
dc.date.available 2004-10-06T17:06:18Z
dc.date.issued 1993
dc.identifier.clearanceno 93-2049 en_US
dc.identifier.uri http://hdl.handle.net/2014/36574
dc.description.abstract Germanium:Silver (Ge:Ag) composite thin films having different concentrations of Ag, ranging from 7% to 40% have been prepared by dc co-sputtering of Ge an Ag and the films' surface morphology and optical properties have been characterized using transmission electron microscopy (TEM) and infrared spectrophotometry. It is seen that while the films containing lower concentrations of Ag have island-like morphology (i.e. Ag particles distributed in a Ge matrix), the higher metallic concentration films tend to have symmetric distribution of Ag and Ge. en_US
dc.format.extent 1056669 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other Optical Dielectric Inhomogeneous Infrared Effective Mean Field Theory Composite Films Germanium Silver en_US
dc.title Optical Properties of Semiconductor-Metal Composite Thin Films in the Infrared Region en_US


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