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Beem Spectroscopy of Electron Transport Through A1As/GaAs Heterostructures

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dc.contributor.author Kaiser, W. J. en_US
dc.contributor.author Hecht, M. E. en_US
dc.contributor.author Bell, L. D. en_US
dc.contributor.author Grunthaner, F. J. en_US
dc.contributor.author Davis, L. C. en_US
dc.date.accessioned 2004-10-06T16:36:55Z
dc.date.available 2004-10-06T16:36:55Z
dc.date.issued 1993-11-05 en_US
dc.identifier.citation Physical Review B en_US
dc.identifier.clearanceno 93-1946 en_US
dc.identifier.uri http://hdl.handle.net/2014/36479
dc.description.abstract BEEM spectroscopy has been used to characterize hot carrier transport through A1As/GaAsheterostructures. The dependence of electron transmission on A1As thickness has been directlymeasured, and the position of the A1As L_1 minima, which has been subject to some uncertainty inthe past, has been determined. First-principles transmission calculations, based on a tight-bindingformalism, are compared to the results of BEEM spectroscopy. en_US
dc.format.extent 1152004 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.title Beem Spectroscopy of Electron Transport Through A1As/GaAs Heterostructures en_US


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