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Very Long Wavelength Intersubband Infrared Hot Electron Transistor

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dc.contributor.author Gunapala, S. D. en_US
dc.contributor.author Liu, J. K. en_US
dc.contributor.author Lin, T. L. en_US
dc.contributor.author Park, J. S. en_US
dc.date.accessioned 2004-10-06T15:29:17Z
dc.date.available 2004-10-06T15:29:17Z
dc.date.issued 1993
dc.identifier.citation Japanese Journal of Applied Physics en_US
dc.identifier.citation Solid State Devices and Materials en_US
dc.identifier.citation Chiban, Japan en_US
dc.identifier.clearanceno 93-1804 en_US
dc.identifier.uri http://hdl.handle.net/2014/36269
dc.description.abstract We have demonstrated the first very long wavelength (16 micrometers) infrared hot electron transistor (IHET). This device utilizes a bound to continuum GaAs/A1_xGa_(1- x)As (X=0.11) quantum well infrared photodetector (QWIP) as a photosensitive emitter, a wide quantum well as a base, and a thick A1_xGa_(1-x)As (X=0.11) barrier between the base and the collector as an energy discriminating filter. This energy filter blocks the lower energy electrons, which drain through the base while higher energy photo electrons pass to the collector. Therefore, the detectivity of the device at the collector is much higher than the detectivity at the emitter. en_US
dc.format.extent 333657 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other quantum well hot electron intersubband infrared detectors and long wavelength en_US
dc.title Very Long Wavelength Intersubband Infrared Hot Electron Transistor en_US


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