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Review of Heterojunctin Bipolar Transistor Structure, Applications, and Reliability

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dc.contributor.author Lee, C. en_US
dc.contributor.author Kayali, S. en_US
dc.date.accessioned 2004-10-06T04:12:26Z
dc.date.available 2004-10-06T04:12:26Z
dc.date.issued 1993-10 en_US
dc.identifier.citation San Jose, California, USA en_US
dc.identifier.clearanceno 93-1348 en_US
dc.identifier.uri http://hdl.handle.net/2014/35627
dc.description.abstract Heterojunction Bipolar Transistors (HBTs) are increasingly employed in high frequency, high linerity, and high efficiency applications. As the utilization of these devices becomes more widespread, their operation will be viewed with more scrutiny. en_US
dc.format.extent 195627 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other efficiency structure reliability testing en_US
dc.title Review of Heterojunctin Bipolar Transistor Structure, Applications, and Reliability en_US


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