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Tailorable Doping-Spike PtSi Infrared Detectors Fabricated by Si Molecular Beam Epitaxy

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dc.contributor.author Lin, T. L. en_US
dc.contributor.author Park, J. en_US
dc.contributor.author George, T. en_US
dc.contributor.author Gunapala, S. en_US
dc.contributor.author Jones, E. W. en_US
dc.date.accessioned 2004-10-06T03:37:44Z
dc.date.available 2004-10-06T03:37:44Z
dc.date.issued 1993-08 en_US
dc.identifier.citation Chiba, Japan en_US
dc.identifier.clearanceno 93-1011 en_US
dc.identifier.uri http://hdl.handle.net/2014/35423
dc.format.extent 40005 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other Si-compatible detectors responsive infrared sensors Schottky barrier heights cutoff wavelength PtSi IR detectors` en_US
dc.title Tailorable Doping-Spike PtSi Infrared Detectors Fabricated by Si Molecular Beam Epitaxy en_US


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