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Partially Grooved Domain Stabilization Structures for Vertical Bloch Line Memory

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dc.contributor.author Katti, R. R. en_US
dc.contributor.author Dooley, J. A. en_US
dc.contributor.author Meng, A. en_US
dc.date.accessioned 2004-10-06T01:43:13Z
dc.date.available 2004-10-06T01:43:13Z
dc.date.issued 1993-02-15 en_US
dc.identifier.citation IEEE Transactions on Magnetics en_US
dc.identifier.clearanceno 93-0487 en_US
dc.identifier.uri http://hdl.handle.net/2014/35009
dc.description.abstract Bias field stability ranges were measured and numerically simulated for magnetic domains ingarnets stabilized by partially grooved rectangular and ring grooves. Simulation results agreefavorably with experimental results when finite slope effects of the groove walls are included. Asbias fields increase, rectangular and ring domains both destabilize through stripe head recession. Asbias fields decrease, destabilization in rectangular domains occurs by runout, while destabilization inring domains occurs by midstripe domain buckling. While ring domains are stable at lower biasfields than rectangular domains, bias field stability ranges are approximately equal. Hence, for thesame partial grooving depth, rectangular domains are preferred because they offer higher storagedensity potential in Vertical Block Line (VBL) storage arrays as long as bit propagation margins atstripe ends are sufficient. en_US
dc.format.extent 795214 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.title Partially Grooved Domain Stabilization Structures for Vertical Bloch Line Memory en_US


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