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Ballistic-Electron-Emission Microscopy of Strained Si<sub>l-x</sub>Ge<sub>x</sub> Layers

Ballistic-Electron-Emission Microscopy of Strained Si<sub>l-x</sub>Ge<sub>x</sub> Layers

Milliken, A. M.; Bell, L. D.; Manion, S. J.; Kaiser, W. J.; Fathauer, R. W.; Pike, W. T.
URI: http://hdl.handle.net/2014/34457
Date: 1994

Abstract:

Ballistic-electron-emission microscopy has been used to investigate the effects of strain on Si<sub>l-x</sub>Ge<sub>x</sub> alloys. Lifting of the degeneracy of the conduction-band minimum of SiGe due to lattice deformation has been directly measured by application of BEEM spectroscopy to Ag/Si structures.

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