Delta-doped CCDs as Stable, High Sensitivity, High Resolution UV Imaging Arrays

Nikzad, S.; Hoenk, M. E.; Grunthaner, P. J.; Terhune, R. W.; Grunthaner, F. J.; Winzenread, R.; Fattahi, M.; Tseng, H-F.

dc.contributor.author	Nikzad, S.	en_US
dc.contributor.author	Hoenk, M. E.	en_US
dc.contributor.author	Grunthaner, P. J.	en_US
dc.contributor.author	Terhune, R. W.	en_US
dc.contributor.author	Grunthaner, F. J.	en_US
dc.contributor.author	Winzenread, R.	en_US
dc.contributor.author	Fattahi, M.	en_US
dc.contributor.author	Tseng, H-F.	en_US
dc.date.accessioned	2004-10-05T22:11:36Z
dc.date.available	2004-10-05T22:11:36Z
dc.date.issued	1994--April	en_US
dc.identifier.citation	Orlando, Florida, USA	en_US
dc.identifier.clearanceno	94-0663	en_US
dc.identifier.uri	http://hdl.handle.net/2014/33928
dc.description.abstract	Delta-doped CCDs have achieved stable quantum efficiency, at the theoretical limit imposed by reflection from the Si surface in the near UV and visible. In this approach, an epitaxial silcon layer is grown on a fully-processed commercial CCD using molecular beam epitaxy.	en_US
dc.format.extent	445224 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.subject.other	silicon growth boron atoms ultraviolet MBE delta-doped CCD's	en_US
dc.title	Delta-doped CCDs as Stable, High Sensitivity, High Resolution UV Imaging Arrays	en_US