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Delta-doped CCDs as Stable, High Sensitivity, High Resolution UV Imaging Arrays

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dc.contributor.author Nikzad, S. en_US
dc.contributor.author Hoenk, M. E. en_US
dc.contributor.author Grunthaner, P. J. en_US
dc.contributor.author Terhune, R. W. en_US
dc.contributor.author Grunthaner, F. J. en_US
dc.contributor.author Winzenread, R. en_US
dc.contributor.author Fattahi, M. en_US
dc.contributor.author Tseng, H-F. en_US
dc.date.accessioned 2004-10-05T22:11:36Z
dc.date.available 2004-10-05T22:11:36Z
dc.date.issued 1994--April en_US
dc.identifier.citation Orlando, Florida, USA en_US
dc.identifier.clearanceno 94-0663 en_US
dc.identifier.uri http://hdl.handle.net/2014/33928
dc.description.abstract Delta-doped CCDs have achieved stable quantum efficiency, at the theoretical limit imposed by reflection from the Si surface in the near UV and visible. In this approach, an epitaxial silcon layer is grown on a fully-processed commercial CCD using molecular beam epitaxy. en_US
dc.format.extent 445224 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other silicon growth boron atoms ultraviolet MBE delta-doped CCD's en_US
dc.title Delta-doped CCDs as Stable, High Sensitivity, High Resolution UV Imaging Arrays en_US


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