JPL Technical Report Server
Cryogenic GaAS JFETS
Login
JPL TRS Home
→
JPL Technical Report Server
→
JPL TRS 1992+
→
View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.
Cryogenic GaAS JFETS
Cunningham, T.
;
Fossum, E.
URI:
http://hdl.handle.net/2014/33886
Date:
1994-04-05
Citation:
Society of Photo-Optical Instrumentation Engineering
Orlando, Flordia, USA
Abstract:
Gallium arsenide junction field-effect transistors (GaAS JFETS) are promising for deep cryogenic (<10k) readout electonics applications.
Show full item record
Items in TRS are protected by copyright, but are furnished with U.S. government purpose use rights.
Files in this item
Name:
94-0618.pdf
Size:
296.2Kb
Format:
PDF
View/
Open
This item appears in the following Collection(s)
JPL TRS 1992+
JPL TRS 1992+
Search
Search
This Collection
Browse
All Content
Communities & Collections
By Issue Date
Authors
Titles
Subjects
This Collection
By Issue Date
Authors
Titles
Subjects
My Account
Login
Register