Cryogenic GaAS JFETS

Cunningham, T.; Fossum, E.
URI: http://hdl.handle.net/2014/33886
Date: 1994-04-05
Citation: Society of Photo-Optical Instrumentation Engineering
Orlando, Flordia, USA

Abstract:

Gallium arsenide junction field-effect transistors (GaAS JFETS) are promising for deep cryogenic (<10k) readout electonics applications.

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