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GaAs JFETS Intended for Deep Cryogenic VLWIR Readout Electronics
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GaAs JFETS Intended for Deep Cryogenic VLWIR Readout Electronics
Cunningham, T.
;
Fossum, E.
URI:
http://hdl.handle.net/2014/33843
Date:
1994-06-29
Citation:
Grenoble, France
Abstract:
This paper presents the structure and fabrication of GaAs JFETSs and their performance at 4 K.
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JPL TRS 1992+
JPL TRS 1992+
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