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GaAs JFETS Intended for Deep Cryogenic VLWIR Readout Electronics

GaAs JFETS Intended for Deep Cryogenic VLWIR Readout Electronics

Cunningham, T.; Fossum, E.
URI: http://hdl.handle.net/2014/33843
Date: 1994-06-29
Citation: Grenoble, France

Abstract:

This paper presents the structure and fabrication of GaAs JFETSs and their performance at 4 K.

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